Imperfect two-dimensional topological insulator field-effect transistors

Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

We present an efficient, fully quantum mechanical approach to calculating ballistic transport in fully-depleted silicon-on-insulator metal-oxide semiconductor field effect transistor devices in three dimensions and apply the technique to the calculation of threshold voltages for realistic devices with narrow channels. We illustrate the fact that each dopant configuration becomes exceedingly imp...

Theory of Ballistic Nanotransistors

Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional (2-D) electrostatic effects are small (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to Natori’s theory of the ballistic MOSFET. The model also treats 2-D electrostatics and the quant...

Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors

Field-effect transistor on SrTiO3 with sputtered Al2O3 gate insulator

Metal–insulator–semiconductor electrostatics of carbon nanotubes

Carbon nanotube metal–insulator–semiconductor capacitors are examined theoretically. For the densely packed array of nanotubes on a planar insulator, the capacitance per tube is reduced due to the screening of the charge on the gate plane by the neighboring nanotubes. In contrast to the silicon metal–oxide–semiconductor capacitors, the calculated C – V curves reflect the local peaks of the one-...